http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0443544-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J43-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-32
filingDate 1990-06-06^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5db0453a370cc59f5cfaaeff84c92fae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_415f5c7e8f81fa1a70e69273a1dd4efc
publicationDate 1992-02-13^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0443544-A
titleOfInvention Semiconductor ceramic composite for secondary electron multiplying device
abstract PURPOSE: To obtain stable operation in ultra-high vacuum environment by subjecting a semiconductor ceramic having a suitable composition ratio of zinc oxide-titanium oxide-copper oxide to a baking process. n CONSTITUTION: Zinc oxide, oxide copper and titanium oxide are prepared, and so blended as to obtain a semiconductor ceramic having a suitable composition ratio thereof. Then, the aforesaid materials are wet grindered and mixed, and further subjected to processes of dehydration, drying, pulverization and grading. A product so molded is baked in natural atmosphere, using an electric furnace, and a cylindrical semiconductor ceramic sample is thereby obtained. n COPYRIGHT: (C)1992,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0797872-A
priorityDate 1990-06-06^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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