http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05343356-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 1992-06-09^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98e6a59c7bd6f23275acd05094dddfff |
| publicationDate | 1993-12-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H05343356-A |
| titleOfInvention | Method of forming metal plug |
| abstract | (57) [Abstract] [Purpose] To suppress the adsorption of source gases on the interlayer insulating film and prevent the breakage of the selectivity when forming the selective metal. [Structure] A wafer in which a contact hole 37 is formed in an interlayer insulating film 32 is subjected to a solution reaction treatment, and a surface treatment layer 34 made of trimethylsilane is formed on the interlayer insulating film 32 and a sidewall of the contact hole 37. The surface treatment layer 34 can prevent the selective metal CVD from breaking the selectivity, and a good W plug 35 can be obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6432820-B1 |
| priorityDate | 1992-06-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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