http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0574608-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-10 |
| filingDate | 1991-09-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_441788c1ca74c85b46855c5c10a5d1ce |
| publicationDate | 1993-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0574608-A |
| titleOfInvention | Method of manufacturing voltage nonlinear resistor |
| abstract | (57) [Abstract] [Purpose] When reducing the varistor voltage for low voltage circuits, if the zinc oxide crystal grain size is 10 to 20 μm, the thickness of the resistor must be 0.1 to 0.2 mm. Since it has no strength, the crystal grain size is increased. [Structure] By reducing the amount of additives forming the grain boundaries of zinc oxide crystal grains, the crystal grain size can be increased without impairing the voltage nonlinearity. That is, the total addition amount of at least one of Pr and La is 0.08 to 2.0 at%, Mg and Ca The total addition amount of at least one of 0.001 to 2.0 at%, the total addition amount of at least one of K, Cs, and Rb at 0.001 to 0.5 at%, and the addition amount of Cr at 0.001 to 0.5 at%. In addition, firing is performed in an atmosphere with an oxygen partial pressure of 40% or more to lower the firing temperature and reduce characteristic variations. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5707583-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008218665-A |
| priorityDate | 1991-09-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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