| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
1992-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4feec97297a881ac6ec9b816b7db71bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4876157278edf148fb580389c18047ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ba5f44bd70d834e1985b3c722f132b |
| publicationDate |
1994-05-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06132286-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
(57) [Abstract] [Purpose] Manufacturing of a semiconductor device having an antireflection film having excellent antireflection properties, which is capable of sufficiently processing fine patterns, and a semiconductor device having the antireflection film. Provide a way. [Structure] The wiring 7 and a part of the gate electrode 15 are formed of a film 6 containing titanium boride as a main component. Patterning is performed by photolithography using the film 6 containing titanium boride as a main component as an antireflection film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6822303-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6380064-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5801399-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7294893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6541830-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6544876-B1 |
| priorityDate |
1992-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |