http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06134256-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-34
filingDate 1992-10-27^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa4c4fb87e8935524ea70e2ced7aa48a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_496900acd423d5a9f91405ce9c2f6935
publicationDate 1994-05-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06134256-A
titleOfInvention Hazardous gas purification method
abstract (57) [Summary] [Objective] To remove harmful nitrogen fluorides such as nitrogen trifluoride, dinitrogen tetrafluoride and dinitrogen difluoride contained in the gas discharged from the semiconductor manufacturing process. [Structure] A gas containing nitrogen fluoride such as nitrogen trifluoride is passed through a purifying cylinder and brought into contact with a purifying agent mainly containing metallic zinc and metallic aluminum under heating.
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priorityDate 1992-10-27^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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