http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06174364-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F25J3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F25J3-02
filingDate 1992-12-01^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a3e30b0ffcade63337007ba07499891
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f25b9a88473a38c54f7119ddfc3f76b
publicationDate 1994-06-24^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H06174364-A
titleOfInvention Method and apparatus for producing ultra-high-purity monosilane
abstract (57) [Summary] [Object] An object of the present invention is to obtain a method and an apparatus for easily and continuously producing ultra-high purity monosilane gas and liquid monosilane. [Constitution] Monosilane raw material gas, which also serves as a heat source, is introduced into the lower stage of the double rectification column divided into upper, middle, and lower stages by the middle and lower reboiler condensers, and the monosilane source gas is cooled by cold in the lower reboiler condenser. The high boiling point component is separated from the raw material gas, the remaining low boiling point component is led to the upper stage through the middle and middle reboiler condensers, and the top of the upper stage is cooled by cold to separate the monosilane and the low boiling point component, A method and an apparatus for producing ultra-high-purity monosilane, wherein mono-silane is rectified as a reflux liquid to obtain ultra-high-purity monosilane from the bottom of the upper stage.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100852355-B1
priorityDate 1992-12-01^^<http://www.w3.org/2001/XMLSchema#date>
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