| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-97 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
1993-12-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3a843e5c44fcfd875d949173a5c1571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eec493fd1063270d3f431c877c8db559
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3ed29b0782584ebebe1b77e8e11b002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f4f6fd3f607a3806005835080d79e66 |
| publicationDate |
1994-09-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06244370-A |
| titleOfInvention |
Local interconnection of CMOS circuits and manufacturing method |
| abstract |
(57) Abstract: A method for manufacturing a local interconnect of tungsten in a high density CMOS circuit and a high density CMOS circuit having a local interconnect formed of tungsten. [Structure] (1) A silicon substrate having circuit elements formed thereon is prepared, (2) a chromium etch stop layer is deposited on the circuit elements on the silicon substrate, and (3) non-deposited on the chromium layer. Depositing a conductive layer of tungsten in a selective manner, (4) patterning a photoresist mask layer on the tungsten layer by a lithographic method, (5) etching the tungsten layer to stop at the chromium layer, (6) Remove the photomask and (7) remove the chromium layer using directional O 2 reactive ion etching until it reaches the silicon layer. As a result, the contacts partially overlap, providing a local interconnect with improved density and performance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7622740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7223666-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7993992-B2 |
| priorityDate |
1993-01-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |