http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07169939-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 |
| filingDate | 1994-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b30852dc6db2e98125a68fa32253cbd |
| publicationDate | 1995-07-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07169939-A |
| titleOfInvention | Semiconductor device |
| abstract | (57) [Abstract] [PROBLEMS] To provide a semiconductor device capable of preventing a decrease in withstand voltage of an oxide film between an extraction electrode and a semiconductor substrate due to diffusion of an aluminum component of the extraction electrode into an oxide film. A base 2 and an emitter 3 are formed from a part of the surface of the semiconductor substrate 1 toward the inside, and an oxide film 4 is formed on the surface of the semiconductor substrate 1 in a range including the base 2 and the emitter 3. An extraction electrode made of aluminum, which is connected to each of the base 2 and the emitter 3 through a contact hole opened in, is formed outside the formation range of the base 2 and the emitter 3. A polysilicon layer 7 is interposed between the oxide film 4 and the extraction electrodes 5 and 6 so as to partially protrude from the formation range of the extraction electrodes 5 and 6 outside the formation range of the base 2 and the emitter 3. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2341278-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9952131-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2341278-A |
| priorityDate | 1994-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268 |
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