http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07283165-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_daa48ed820a7dad29affa51e58caf757 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-28 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-445 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1993-05-06^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cd68febfdada58e9911fd44b4d4d494 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac6f9cdeb92853d6a6ba0b18ed479a72 |
| publicationDate | 1995-10-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07283165-A |
| titleOfInvention | Method of providing ohmic contact on ZnSe layer |
| abstract | (57) [Summary] [Object] To obtain a method for forming an ohmic contact on a p-type nitrogen-doped layer of ZnSe. [Structure] The ZnSe layer was wetted with a Hg-containing solution, A method of providing an ohmic contact on a ZnSe layer (2) provided on a substrate (1) by heating to a temperature of 00 ° C. or higher, A ZnSe layer is formed by immersing the above substrate in a Hg-containing bath heated to a temperature of 200 ° C or higher but not higher than 350 ° C. Wet (2) and heat. This method can be used to provide an ohmic contact (4) on the p-type nitrogen-doped ZnSe layer. After a time longer than 120 minutes, Hg x Zn 1-x Se (where x is 0 in the ZnSe layer to 1 on the outer surface thereof) Contact 4 is formed on the layer (3) which varies up to The grown layer forms an ohmic contact with the layer of nitrogen-doped ZnSe. |
| priorityDate | 1992-05-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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