| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa67eb74ea5b96d9f8f2cfdb3b025770 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0042 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-10 |
| filingDate |
1995-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7943e8c3af69576b34475140fb69f793
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70d3b92000a077f0ffe92b91607fb0b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51efee9854d2675da8c3f5b3eb6ab755 |
| publicationDate |
1996-04-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08104983-A |
| titleOfInvention |
Method of sputtering material on substrate |
| abstract |
(57) Abstract: In order to reduce the arc between the target and the anode when depositing a thin film of a non-conducting or semi-conducting element such as silicon dioxide or silicon nitride on a substrate, a magnetron A method for controlling the operation of a sputtering apparatus. A mixed gas of two different rare gases (63, 65) is used. The relative proportions of two or more noble gases are chosen to reduce the likelihood of arcing during sputtering. Thereby, process control by the automatic feedback controller (57, 59, 61) allows maintaining stable operation within the desired hysteresis region (49) of the deposition rate characteristic curve. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013216957-A |
| priorityDate |
1994-08-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |