| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
1994-11-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc9de241693b08f570814cd140eb3854 |
| publicationDate |
1996-06-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08148686-A |
| titleOfInvention |
Thin film transistor and manufacturing method thereof |
| abstract |
(57) [Abstract] [Purpose] To provide a structure and a manufacturing method of a top-gate TFT having a short gate length and excellent basic characteristics including drain breakdown voltage. The silicon dangling bonds in the channel region 103ac are terminated by hydrogen only in the silicon dangling bonds near the interface between the gate oxide film 104a and the channel region 103ac. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006196564-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100867537-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015090929-A |
| priorityDate |
1994-11-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |