| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1995-02-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42a6d60610547848947d6fda867f031a |
| publicationDate |
1996-08-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08213367-A |
| titleOfInvention |
Etching method using vapor phase chemical reaction |
| abstract |
(57) [Abstract] [Purpose] Regarding an etching method using a gas phase chemical reaction, various members to be etched using only one etching gas system without using a plasma reaction and without increasing a processing temperature. To efficiently etch. [Structure] The TiN film 4, which is the member to be etched, is lightly etched using a mixed gas 9 of ClF 3 and NH 3 gas that is an H + source to remove the natural oxide film on the surface of the TiN film 4. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7371263-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7033946-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6503842-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5888906-A |
| priorityDate |
1995-02-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |