http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08238745-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41F33-10 |
| filingDate | 1995-03-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4589a1f8dcfd07fb5cad45071a88b6e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c3bc60c2c0691c1e053efbfba543acf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_155f5b693ee4e7b39eb4deffcf618650 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54fbb2c9320635e523d8e1c851134b09 |
| publicationDate | 1996-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08238745-A |
| titleOfInvention | Method of forming oxide film |
| abstract | (57) [Summary] [Object] The present invention realizes the formation of a dense insulating film such as a gate oxide film adapted to the high reliability of the insulating film such as a gate oxide film in the development of a MOS transistor. [Structure] A silicon wafer is wet-washed and ozone is introduced into a natural oxide film formed on the silicon wafer while irradiating ultraviolet rays at a temperature of 25 ° C. or less to form a silicon oxide film. Further, the silicon dioxide film formed on the silicon wafer is heat-treated in an atmosphere containing ozone. |
| priorityDate | 1995-03-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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