| abstract |
Method and apparatus for producing a single crystal (20) made of SiC, wherein a crystal nucleus (21) is disposed to precipitate a SiC single crystal (20) from a gas phase The chamber 2 and the storage chamber (4), which is at least partially filled with SiC reservoirs (40), are connected by means of gas channels (3) having a defined cross-sectional area for transporting the gas phase SiC. In the heating device (6), the SiC storage (40) is sublimed and the temperature gradient in the reaction chamber (2) is adjusted. As a result, the transport ratio of gas molecules can be accurately adjusted, so that it is possible to produce a SiC single crystal having an arbitrary cross section with high crystal quality and good single crystal yield. |