http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H09270469-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-413 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-412 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 |
| filingDate | 1996-03-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e58d9c4d9eea99d7630bc976ff82dea4 |
| publicationDate | 1997-10-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H09270469-A |
| titleOfInvention | Semiconductor memory device |
| abstract | (57) [Abstract] [PROBLEMS] To prevent a soft error from occurring in an SRAM memory cell. A first aluminum wiring 33 serving as a power supply line and a fourth aluminum wiring 40 serving as a ground line. Are arranged in parallel to the word line direction, and the additional transistors P1 and P2 and the driving transistors N1 and N2 are interposed between them. Place. The additional transistors P1 and P2 are arranged in the N-type region of the semiconductor substrate 1, and the driving transistors N1 and N2 are arranged in the P-Well region 2. N-type region and P-Wel The active region 51 is formed at the boundary with the 1 region 2, and a capacitance is formed between the active region 51 and the connecting portion connecting the gates of the additional transistors P1 and P2 and the gates of the driving transistors N1 and N2. Increase the gate capacitance. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6535417-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4911976-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6627960-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007521640-A |
| priorityDate | 1996-03-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268 |
Showing number of triples: 1 to 22 of 22.