| abstract |
(57) An object of the present invention is to provide a quantum semiconductor device including a quantum dot and showing a sharp energy spectrum corresponding to a quantum level. A heteroepitaxial structure forming a strain system with respect to a substrate is alternately and repeatedly deposited on a substrate with an intermediate layer sandwiched therebetween to form a series of vertically aligned quantum dots. The layer thickness is set to be substantially smaller than the Bohr radius so that the aligned series of quantum dots are quantum mechanically coupled to each other, effectively forming a single quantum dot. To do. |