| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
1996-11-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_824b42202c358547e244b228543d9854
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_728fae0e8dfc3e836869fa64ce09b432
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3e0964c04a85b36d432d2c34bc0f140 |
| publicationDate |
1998-06-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H10163114-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
(57) [Problem] To provide a method of manufacturing a semiconductor device capable of forming a gallium nitride crystal with uniformity and good reproducibility. SOLUTION: After forming a zinc oxide layer on a single crystal substrate, a first gallium nitride crystal is formed in a temperature range of 0 ° C to 900 ° C, and then a second gallium nitride crystal is formed in a temperature range of 900 ° C to 2000 ° C. To form a gallium nitride crystal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772787-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012162431-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002542624-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100631905-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4613373-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015162606-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7811908-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001035805-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013227178-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100438813-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100763467-B1 |
| priorityDate |
1996-11-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |