| abstract |
[PROBLEMS] To provide a magnetoresistive element capable of obtaining a high magnetic field sensitivity, a high switching field, and a high rate of change in resistance. SOLUTION: The magnetoresistance effect element is made of glass or S a nonmagnetic Co oxide film, a fixed magnetic layer 4 made of Co, a nonmagnetic layer 3 made of Cu, The free magnetic layer 2 made of iFe is stacked in this order. Since the nonmagnetic Co oxide film is in contact with the fixed magnetization layer 4, a magnetoresistance effect element having a high switching field and high magnetic field sensitivity can be manufactured. |