| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525 |
| filingDate |
1997-08-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9e38a5252499a5651fc45833db1594a |
| publicationDate |
1998-03-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H1084042-A |
| titleOfInvention |
Semiconductor device, method of manufacturing the same, and method of forming polysilicon fuse having close pitch in semiconductor |
| abstract |
A method of reducing the pitch of a polysilicon fuse using a tungsten barrier formed adjacent to a fuse element. SOLUTION: A tungsten barrier is formed by stacking via-level tungsten on contact-level tungsten during a crack stop. Be compatible with the process of forming stops. An intermediate level dielectric is used to cover the fuse. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6495918-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100424657-B1 |
| priorityDate |
1996-08-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |