| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8feeca397e785f00839dcd24cb2ff209 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate |
1998-01-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2376840620a4bc6a3ba3c430892c5848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de09ddc96d46c74444574a6c68afeeb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_880451b29197b651fa68ff5950db6cf2 |
| publicationDate |
1999-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11209199-A |
| titleOfInvention |
Synthesis method of GaN single crystal |
| abstract |
[PROBLEMS] To grow a large-sized, high-quality GaN epitaxial film at high speed. SOLUTION: Two temperature regions T 1 and T 2 are formed in a gas containing a nitrogen atom, and the temperature of each region is set to T 1 <T 2. And Low temperature range T 1 to a solid of the Ga source 8 is placed each GaN seed crystal or GaN single crystal substrate 13 to the high temperature region T 2. Evaporated Ga from the low temperature area T 1, the evaporated and Ga is reacted with the nitrogen components in the gas to form a GaN forming gas, a GaN forming gas of high temperature region T 2 of the seed crystal or GaN single crystal substrate 13 And a GaN single crystal is synthesized. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017109891-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100519035-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004050806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012091967-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010269968-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100502467-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008516877-A |
| priorityDate |
1998-01-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |