http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11312681-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1998-04-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fac7754a7f8642e1fef9164e84d5346d |
| publicationDate | 1999-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H11312681-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) [PROBLEMS] To prevent corrosion of Al wiring when an insulating film containing fluorine is used. SOLUTION: Al2 is etched on a silicon substrate 1 using a photoresist 5 as a mask to form an Al wiring 2a (a) and (b). In this step, a native oxide film 6 is formed on the side wall of the Al wiring 2a (b). Natural oxide film 6 Is formed at the same time as Al etching, so that elements such as chlorine gas during etching and carbon in the photoresist material are mixed into the aluminum oxide, and a high-quality aluminum oxide film having a uniform composition is formed. Absent. Therefore, the natural oxide film 6 on the side wall is removed by physical etching using an inert gas such as argon or reactive etching such as BCl 3 under a reduced pressure or an atmosphere containing little oxygen (c). Subsequently, oxygen or oxygen radicals are introduced without breaking vacuum to form a high-quality aluminum oxide film 6a on the Al side wall (d). A fluorine-containing insulating film 7 is formed on the barrier of the high-quality aluminum oxide film 6a (f). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018507546-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100587598-B1 |
| priorityDate | 1998-04-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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