| abstract |
[PROBLEMS] A polishing composition for polishing an edge portion of a semiconductor substrate made of a silicon wafer, a compound wafer, or the like, which is covered with an oxide film / nitride film, etc., and a method for preparing the same, And an edge polishing method using the composition. SOLUTION: 1 to 15% by weight of silicon oxide particles having an average primary particle diameter of 8 to 500 nm, and at least one kind of fine particles of a metal compound comprising an oxide, nitride or carbide having an average primary particle diameter of 10 to 3000 nm Wt.%, PH 8.3 A polishing composition which is a colloidal solution having a weak acid and / or a weak base having a logarithm of the reciprocal of the acid dissociation constant at 25 ° C. of 8.0 to 12.5. And a strong base, a combination of a strong acid and a weak base or a combination of a weak acid and a weak base, and a polishing composition adjusted as a buffer solution acting at pH 8.3 to 11.5, preferably 25 ° C. A polishing composition having a conductivity of 25 mS / m or more per 1% by weight of silicon oxide. |