patent/JP-S53105171-A

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate	1977-02-15^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8c325b71f6065dcd8a04d42b040f97e
publicationDate	1978-09-13^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	JP-S53105171-A
titleOfInvention	Manufacture of semiconductor device
abstract	PURPOSE: The density of phosphorus is made sufficiently high at the side facing a Si substrate, and sufficiently low or 0 at the side facing an Al electrode, and this is used for an impurity diffusing source in order to suppress the electrochemical reaction due to interstitial water, thereby preventing the disconnection of the Al electrode. n COPYRIGHT: (C)1978,JPO&Japio
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6150336-A
priorityDate	1977-02-15^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24404 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559532 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962

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