http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5522877-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
filingDate 1978-08-08^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64e7f5cdb1edf9cecbf3a3b8c78b5e4d
publicationDate 1980-02-18^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5522877-A
titleOfInvention Forming method for electrode protective film in semiconductor device
abstract PURPOSE: To improve a characteristic of a protective film by coating a photoresist of a desirable film on an electrode wiring directly to be exposed to an O 2 plasma. n CONSTITUTION: A photoresist film 9 is formed on a wiring layer 7 of a base 2 and emitter 3 to shape a desirable configuration it by a photoprinting. When, for example, a plasma is generated under an O 2 pressure of 1Torr, at 3.56MHz and 200W, and the film 9 is exposed for 30 seconds, the surface is partially ashed, and the hardening is promoted by raising of a temperature in the surface and oxidation due to active oxygen. When a plasma processing time is too short, the hardening is unsufficinet, while too long, the film thickness is reduced, and hence a cautious processing is desired. According to such a process, an etching process to the protective film can be eliminated, the electrode surface is not suffered from any damage with reduction of a work process, and as a result the characteristics of the device can be stabilized. n COPYRIGHT: (C)1980,JPO&Japio
priorityDate 1978-08-08^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
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