http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5534446-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
filingDate 1978-08-31^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b890a37ec7b565890ff5e361d7ec6760
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7882274718a7d0a1bbdac318aa707842
publicationDate 1980-03-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5534446-A
titleOfInvention Preparation of semiconductor device
abstract PURPOSE: To obtain excellent base electrode ohmic-contact, by removing polycrystal silicon covering portions located near a base electrode contact window, and by preventing the diffusion of phosphor to a P type base region. n CONSTITUTION: A polycrystal silicon film 5 is formed on a base electrode contact window 3B and a SiO 2 film 3, to which a window for diffusing an emitter is made up, and a phosphor glass(PSG) film 6 is laminated. The PSG film on the base electrode window 3B is removed, and argon ions or boron ions or the like are injected to an exposure portion of the polycrystal film 5. The exposure portion of the polycrystal film 5 is etched, and heating treated, and an emitter region is diffusion built up. Then, an electrode is formed by removing the PSG film 6. Thus, phosphor is not introduced to a surface of a P type base region 2 because there exists no polycrystal film 5 near the base electrode contact window 3B when the emitter region is diffused, and excellent contact can be gained. n COPYRIGHT: (C)1980,JPO&Japio
priorityDate 1978-08-31^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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