http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S567472-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1979-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21c7b0275002122ccce7befc0d38559a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8a0fa99c73691f0239a6f057b90fe63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eff0c630aaa1528297cdca27838cda5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbb037a216122d09f9f41a880e1f1c27 |
| publicationDate | 1981-01-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S567472-A |
| titleOfInvention | Semiconductor device |
| abstract | PURPOSE:To obtain a bipolar transistor having hFE by diffusing and forming a base region on a semiconductor substrate which forms a collector region, and providing an emitter region containing a predetermined impurity concentration and oxygen while positioning on the surface layer thereof to form a heterojunction. CONSTITUTION:A P-type base region 2 is diffused and formed on an N-type Si substrate 1, and while positioning on the surface of the above region, an N-type emitter region 3 having an area smaller than the region 2 is provided. Upon this occasion, the region 3 is constituted by polycrystal Si consisting of 44 atomic % of O2, 0.6 atomic % of P and 55.4 atomic % of Si or by a polycrystal Si region 3b similarly through the N-type region 3a provided in the region 2, and the emitter function is generated in the above region 3. Thus, if a heterojunction bipolar transistor is formed by a POPOS layer, the characteristic of the region 3 approximates to that of SiO2 by containing O2, and the forbidden gap further increases to an extent greater than that of SiO2, the Hall recombination velocity being reduced and a high hFE can be obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06101470-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03209774-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0101739-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0101739-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61180480-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-8303032-A1 |
| priorityDate | 1979-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 |
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