http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57115822-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74 |
| filingDate | 1981-01-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1da559b7f1599ee078d393a1de3bc65b |
| publicationDate | 1982-07-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S57115822-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To enable the growth of a thin epitaxial layer for the subject semiconductor device by a method wherein an epitaxial layer is grown on a semiconductor crystal substrate, having a buried layer of high density impurities, after the substrate has been baked at a high temperature in hydrogen. CONSTITUTION:An N<+> type diffused buried layer 2 is formed on the prescribed region of a P type Si substrate 1. Then, the substrate 1 is baked at a high temperature in hydrogen. As a result, the density on the surface of region 2 is reduced, and an N type diffused buried layer 2 is formed. An N type epitaxial layer 3 is then formed on the entire surface of the substrate 1. At this time, an N type region 4, having a higher impurity density than the layer 3 and moved up a little from the region 2', is formed. Besides, a P type insulation spilt diffusion region 5, a P type base diffusion region 7, and an N type emitter diffusion region 8 are formed. Accordingly, as autodoping can be suppressed, and a high breakdown voltage between region 7 and region 2 can be maintained, thereby enabling the formation of a thin epitaxial layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6589336-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5927521-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6162706-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6776842-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0897024-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0135452-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0361335-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2766845-A1 |
| priorityDate | 1981-01-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID783 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425193155 |
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