http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57196588-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3803237c01675a891fd94223ffe2b5be
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
filingDate 1981-05-28^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17b4b0d8a7da5bf230165f27c821c843
publicationDate 1982-12-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S57196588-A
titleOfInvention Nonlinear element
abstract PURPOSE:To obtain a highly densed insulating film as well as to contrive improvement in reliability and stabilization of the titled element by a method wherein an anodic oxidation is performed at the prescribed temperature or above. CONSTITUTION:The O2 gas of 0.1-10 Torr or thereabouts is introduced into a vacuum chamber, power of several hundreds watts is discharged and O2 plasma is generated. An oxide film is formed by bumping the oxygen radical in the O2 plasma against the surface of the metal such as Ta and the like and by coupling the metal of the surface layer and oxygen. At this time, an oxide film with excellent quality is obtained by heating up the substrate at the temperature range of 300 deg.C-500 deg.C. Then, O2 gas is introduced into the vacuum chamber, and a laser beam is scanned. The temperature of the metal surface is brought up to approximately 1,000 deg.C, the temperature on the substrate side is brought to about 300 deg.C, and an excellent oxide film (insulating film) of about 100-300Angstrom can be obtained in a microscopic time.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6262333-A
priorityDate 1981-05-28^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
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