http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S575357-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
filingDate 1980-06-13^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05580836b6783a043a6c87a6322ed0dc
publicationDate 1982-01-12^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S575357-A
titleOfInvention Semiconductor device and manufacture thereof
abstract PURPOSE:To highly integrate a semiconductor device without adding a precise lithographic step in a bipolar transistor by improving the base region, thereby preventing the C-E leakage. CONSTITUTION:A transistor is formed in an isolation region pattern 10 (in figure, respective rectangles indicate respective patterns of base region 13, base electrode 13', emitter retion 14, collector contact 15, and collector electrode 16.). A buried dioxidized silicon film 22, a P type base region 23, an N<+> type emitter region 24, an emitter electrode 24' are formed on an N type silicon substrate 21, and a transistor is thus formed. A part 30 of the base region 23 is deeply formed adjacent to the end of the emitter region in the periphery of the top of the apart surrounded at the side with the film 22. Thus, the distance between the regions 24 and 21 is sufficiently increased at the peripheral part, and the C-E leakage can be prevented.
priorityDate 1980-06-13^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

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