http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5756966-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222
filingDate 1980-09-20^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c749eeb45b43d299ae802943bd7338d
publicationDate 1982-04-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S5756966-A
titleOfInvention Manufacture of semiconductor device
abstract PURPOSE:To self align the steps of manufacturing a walled emitter structure, to improve the integration of and the speed of the operation of a semiconductor device and to equalize the characteristics of the device by forming an oxidized film pattern on the nitride film of base and emitter electrode forming window forming regions. CONSTITUTION:An isolation layer 35 is formed in a P type substrate 31 formed with buried layer 32 and an N type epitaxial layer 34, an oxidized film 36 and a nitrided film 37 are then laminated, and oxidized film pattern 38 is formed on the nitrided film 37 of the region formed with the respective electrode windows. Then, a resist 39 is covered between the base and the emitter windows, the nitride film 37 is selectively remoed, the resist 39 is removed, and the selectively oxidezed film 42 is then formed. Then, the collector window 37C is covered, B ions are injected, are oxidized to form an oxidized film 45 and a base region 46. Then, the film 37 and the film 36 are removed, with the resist 52 as a mask an emitter region 49 and a collector connecting point 51 are injected with ions, and the resist 52 is then removed, is heat treated, and a structure exposed with the diffused layers 64, 54, 55 is formed in the respective electrode windows. Thus, the electrode connecting points of a bipolar device which is decreased in size and is increased in density can be self-aligned.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S598350-A
priorityDate 1980-09-20^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

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