| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05552 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 |
| filingDate |
1980-11-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7671daf3dbc89d69423968315ed51c50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7fd280fc305ed7c1ffcb27a7dae2dfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8189878e227a3f2c7d245e90dc67a31a |
| publicationDate |
1982-06-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S5789250-A |
| titleOfInvention |
Semiconductor device |
| abstract |
PURPOSE:To produce transistors having good temperature characteristics of the switching time by providing bounds in finger like wavy profile at least at a boundary area between pads of adjoining electrodes. CONSTITUTION:A profile of a pattern for the emitter electrode 2 which is surrounded by the base electrode 3 on a silicon substrate 1 is designed to be in fingered wavy shape cnsisting of plural waves on each side. Width of the finger (a) between the pads of the emitter electrode 4 and the base electrode 5 is made to be wider than widths of the fingers (b) and (c) at other than the former. By this construction, transistors having good temperature characteristics of switching time can be produced because broken points (the points marked with X) cannot be concentrated at one limited point. |
| priorityDate |
1980-11-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |