http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59132649-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C17-08 |
| filingDate | 1983-01-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0b7cff991122654376b3d9d5c77e50e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7896745e626f4c2bd421c09c439c6a65 |
| publicationDate | 1984-07-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S59132649-A |
| titleOfInvention | Semiconductor fixed memory and manufacture thereof |
| abstract | PURPOSE:To write in any data by means of changing channel length as well as to shorten a turnaround time by a method wherein gate electrodes with the same width of a memory element are formed while in another memory element wherein data are written, source and drain regions with diffusion depth different from that of any other memory element are formed. CONSTITUTION:Gate electrodes 14 with the same width, gate oxide films 13 are etched using the electrodes 14 as mask and arsenic is introduced into the prospective source and drain regions using a field oxide film 12 and the electrodes 14 as blocking mask. Impurity regions 16' with deep diffusion is formed by introducing arsenic and heat treatment using formed resist pattern 15 and the electrodes 14 of writing memory element. In a memory element B with shorter effective channel length than that of a memory element A, ROM data may be written in according to the changing channel length to shorten a turnaround time by the forming time of gate electrode. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61102058-A |
| priorityDate | 1983-01-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359596 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419586572 |
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