http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S59188172-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1983-04-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c33057337193a4058e058bb9cfd60fc |
| publicationDate | 1984-10-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S59188172-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To form accurate electrodes of a semiconductor device by forming aluminum electrodes by lift-off using an insulating film, thereby self-aligning the contacts of emitter and base and the pattern of wirings. CONSTITUTION:Phosphorus ions are implanted to part of the surface of an n type insular region surrounded by an isolation oxidized film 5, a high density n type layer 7 to become a collector leading unit is formed, B ions are implanted to form a p type base layer 9. An Si3N4 film 11 of sufficient thickness is formed by utilizing a plasma discharge on an oxidized film 6, selectively dry etched to form a reverse pattern to the electrodes (base and emitter, and collector). As ions are implanted to form an n<+> type emitter 13. Aluminum 14 is deposited on the overall surface, the Si3N4 is dry etched to selectively remove the aluminum on the Si3N4 in a lift-off, and aluminum electrodes 14 which make contact with the emitter, base and collector regions are obtained. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6037775-A |
| priorityDate | 1983-04-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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