http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S5925247-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1983-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b96c964a7b83eb17a52fe4112a3d5860 |
| publicationDate | 1984-02-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S5925247-A |
| titleOfInvention | Semiconductor device |
| abstract | PURPOSE:To enable a micro-semiconductor device with a minute junction area by both P type and N type semiconductor layers being in ohmic-contact with mutually different first and second semiconductor regions as electrodes and forming an electrode wiring by a semiconductor layer. CONSTITUTION:An N type silicon substrate 11 is thermally oxidized to form a silicon oxide film 12, and an opening section 13 is formed. A silicon thin-film 14 is formed to the whole surface of the substrate 11 exposed by the opening section 13, and boron is introduced into the substrate 11 through the thin-film to form a P type base region 15. A silicon nitride film 16 is formed, and the film 16 except a section functioning as an electrode wiring path is removed. The film 14 is converted into a silicon oxide 17, a film 16' is removed and phosphorus is introduced while using the oxide films 12, 17, 16 as masks, and an emitter region 18 converted into an N type and an electrode wiring path 14' ohmic-connected to the emitter region 18 are obtained. The film 16 is removed, a silicon oxide film 17' is formed, an opening 19 is bored, and electrodes 20, 20' are formed. |
| priorityDate | 1983-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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