http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60161664-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N1-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N1-195 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N1-02805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1055 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N1-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N1-195 |
| filingDate | 1984-02-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd02488ac154395440935979624f65ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32efecb20a1563c610ca3396d1965c2f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a9ceb7d732415faa4a404cb461c4d74 |
| publicationDate | 1985-08-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S60161664-A |
| titleOfInvention | Tightly adhered two-dimensional image readout device |
| abstract | PURPOSE: To realize a simple readout device, which needs no mechanical scanning mechanism, as well as to realize a tightly adhered two-dimensional image sensor, which is superior both in S/N ratio and in photo sensitivity, by a method wherein manuscript information is read out by a photo electric converting film by performing an exposure on the whole surface of the film. n CONSTITUTION: An Al film 2 is evaporated on a pyrex substrate 1 and a P type amorphous silicon film 3-1 is made to deposit on the whole surface thereof by a plasma CVD method. The Al film 2 and the P type amorphous silicon film 3-1 are combinedly worked in a stripe type by an ordinary photolithography process. After the pattern was formed, an I type amorphous silicon film 3-2 is made to deposit thereon, and moreover, an N type amorphous layer 3-3 is made to deposit thereon for forming a photoelectric converting film having a P-I-N diode structure. An ITO (In 2 O 3 -SnO 2 ) (5%) film is further evaporated on the semiconductor layer as a transparent conductive film 4 by performing an RF sputtering. A photoresist pattern is formed in such a way as to cross with the lower Al strip electrode 2 for forming an upper electrode pattern and an etch processing is simultaneously performed, including the N type amorphous silicon layer 3-3 too, for obtaining a two-dimensional photoelectric converting part. n COPYRIGHT: (C)1985,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018131638-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018131638-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11774707-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991764-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017119448-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10908386-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017119448-A1 |
| priorityDate | 1984-02-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID1983 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557597 |
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