http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6066474-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7883 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 |
| filingDate | 1983-09-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cce204c633119d1a01b1b55a3622c0f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94624eb3197810d2f88ab5f4da6c320a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_757f18e8d1b799ddb6320787067c3270 |
| publicationDate | 1985-04-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6066474-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To hold favorably the film quality of a thin oxide film, and to obtain a semiconductor device such as an EPROM, etc. having a superior characteristic by a method wherein a thin first nonsingle-crystal silicon film is formed on the thin oxide film (a tunnel oxide film) to protect the thin oxide film at ion implantation time. CONSTITUTION:Field oxide films 12 and a first gate oxide film 13 are formed on the surface of a p type silicon substrate 11, and etching is performed selectively to form a tunnel oxide film 14. A thin first polycrystalline silicon film 15 is deposited on the whole surface, n type impurity ions are implanted into the substrate 11, and heat treatment is performed to form an n<+> type impurity region 17 to act as a terminal for tunnel implantation. A control gate electrode 21 and a floating gate electrode 22 are formed. n type impurity ions are implanted, and heat treatment is performed to form an n<+> type impurity region 23 to be used as source and drain regions. Ion implantation of a high dose quantity can be performed, the n<+> type impurity region 17 can be formed to have low resistance, and the tunnel voltage can be reduced. |
| priorityDate | 1983-09-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
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