http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S609162-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1983-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_891696eb12240d74ba8fbb05aa557855 |
| publicationDate | 1985-01-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S609162-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To obtain a bipolar-transistor, the degree of integration thereof is improved, and to increase gains and working speed by selectively etching a metal or a metallic silicide film of the periphery of the edge of a resist film to form two second openings and forming base contact holes continuing to the openings. CONSTITUTION:A silicon dioxide film 2, a silicon nitride film 3 and a metallic silicide such as a molybdenum silicide layer 4 are formed on the surface of a collector region 1 combining an N type silicon substrate through thermal oxidation. A sample in which a resist film 5 is patterned is arranged in a parallel plate type reactive ion etching device, and a mixed gas of oxygen and carbon tetrachloride is introduced and the sample is etched. Openings (base contact holes) 7 in 0.2-0.3mum width are formed to the film 3 and the film 2 through reactive ion etching while using the patterned metallic silicide layer 4 and the resist layer 5 as masks. A polycrystalline Si layer 9 to which B is doped is formed. An emitter electrode 12 is formed, and As in the emitter electrode 12 is diffused to one part of a P type base region, thus forming an N<+> type emitter region 13. |
| priorityDate | 1983-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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