http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S61294862-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 |
| filingDate | 1985-06-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2938cdd7d2fd314aabb1b6b6ba1966b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_098e9556ceac9631ac5f6ee698a1e03f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db2f40918575ecbd848c10bcaa1e50cd |
| publicationDate | 1986-12-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S61294862-A |
| titleOfInvention | Manufacture of bipolar transistor |
| abstract | PURPOSE: To obtain a structure, in which a collector capacity is small, by forming a semi-insulating semiconductor layer, removing a part of the semi- insulating semiconductor layer by etching, and regrowing a base layer and an emitter layer thereon. n CONSTITUTION: On a semi-insulating GaAs substrate 1, layers 2∼4 are formed to specified thicknesses. A part of the AlGaAs semi-insulating semiconductor layer 4 is etched, and a part of the collector 2 layer 3 is exposed. Resist is removed with acetone. The P-type GaAs base layer, the N-type AlGaAs emitter 1 layer and the N + type GaAs emitter 2 layer are grown again. Then, a part of a certain part of the semi-insulating semiconductor layer is etched. A part of the base layer and a part of the collector layer are exposed. The resist part is removed with acetone. An emitter electrode 10 is formed at a part, where the semi-insulating semiconductor layer is not present. A base electrode 9 and a collector electrode 8 are formed on the exposed base and collector layers. Thus, the collector capacity can be made very small, and excellent high frequency characteristics can be obtained. n COPYRIGHT: (C)1986,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H031543-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H031542-A |
| priorityDate | 1985-06-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID180 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419537701 |
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