http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6133782-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47a8fd51ce56b46bdd43714adb7a83a9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29L2012-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C65-3684 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C66-71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C66-52441 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C66-91641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C66-1162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C66-1282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C65-3604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C66-12841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C66-5241 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C66-91651 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K13-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B29C65-36 |
| filingDate | 1984-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea39a5ac39a2e321a5dfe6a3181a4b23 |
| publicationDate | 1986-02-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6133782-A |
| titleOfInvention | High-frequency induction welding method of silicon material |
| abstract | PURPOSE:To produce easily a silicon frame having high purity and high quality by bringing a carbon heat medium body near to the position to be welded of silicon materials and heating said part to a high temp. then increasing high- frequency induction heating electric power to melt and weld said part. CONSTITUTION:High-frequency flows around a central square hole 3 when said current is passed from terminals 51, 52 to a coil 2. The high-frequency energy is first absorbed mostly by the heat medium body 7 to increase the temp. thereof. The temp. in the joint part of the silicon materials is also increased by the radiation heat from the body 7, by which the specific resistance of the silicon is decreased. Then the high-frequency induction current begins to flow toward the inside of the silicon. The distributing ratio of the absorbing electric power in the carbon medium body is decreased to attain an equil. state with a decrease in the specific resistance in the inside of silicon. The joint part attains the m.p. or above when the high-frequency electric power is gradually increased after the medium 7 is parted from the welding part. The joint part is welded by exerting slight pressure from an upper supporting bar and decreasing gradually the high- frequency electric power. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102974935-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102974934-A |
| priorityDate | 1984-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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