http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62293675-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1986-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22bcba780e4583a9bb7712def07349dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a148c192b6252300911ae069196e484 |
| publicationDate | 1987-12-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S62293675-A |
| titleOfInvention | Semiconductor device |
| abstract | PURPOSE: To prevent wire breakdown of an interconnection electrode at a step part, by providing a double-layer structure, which comprises a silicon nitride film and a film, whose etching characteristic is different from that of the silicon nitride, as an insulator for isolating an emitter region. n CONSTITUTION: In a single crystal Si substrate 1, an SiO 2 film 2 is provided. A window for forming a base is provided in a polycrystalline Si layer 5 and the SiO 2 film 3. Then, BF 2 ions are implanted, and a P-type base region is provided. An Si 3 N 4 film 9 and a polycrystalline Si layer 6 are formed on the entire surface. The polycrystalline Si layer undergoes RIE treatment, and a side wall is formed. With the polycrystalline Si layer 6 as a mask, the RIE treatment is performed, and the Si 3 N 4 layer 9 is formed. An emitter forming window is provided. Then As ions are implanted, and an emitter is formed. After a polycrystalline Si layer 8 is provided, an Al electrode 10 is formed. n COPYRIGHT: (C)1987,JPO&Japio |
| priorityDate | 1986-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015 |
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