http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62299967-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03C5-18
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30
filingDate 1986-06-20^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b1d7a229d681ed86381e63dbc81ce06
publicationDate 1987-12-26^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S62299967-A
titleOfInvention Formation of negative type resist pattern
abstract PURPOSE:To form a negative resist pattern which obviates the swelling of resist and has >=1mum or smaller width and space by subjecting the resist material consisting of PMIPK to dry developing after image exposing. CONSTITUTION:A polymethyl isopropenyl ketone (PMIPK) is spin-coated at about 1mum thickness on a suitable substrate 4 and after the PMIPK film dries, the film is subjected to about one minute of image exposing by using an Xe-Hg lamp as a far UV exposing source. A wafer 5 after the exposing is housed into a plasma treatment device 1 and is treated in the down flow of the gaseous plasma mixture composed of O2 and CF4. A plasma generating chamber 2 and a plasma treatment chamber 3 of the down flow thereof are segmented by a perforated aluminum plate 6; therefore, the ions and electrons are stagnated in the chamber 2 and only the oxygen radicals flow into the chamber 3. The negative pattern is thus obtd. at bout 300Angstrom resolution and the swelling of the resist pattern is not admitted.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02191959-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01234841-A
priorityDate 1986-06-20^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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