http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62299967-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03C5-18 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 |
filingDate | 1986-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b1d7a229d681ed86381e63dbc81ce06 |
publicationDate | 1987-12-26^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-S62299967-A |
titleOfInvention | Formation of negative type resist pattern |
abstract | PURPOSE:To form a negative resist pattern which obviates the swelling of resist and has >=1mum or smaller width and space by subjecting the resist material consisting of PMIPK to dry developing after image exposing. CONSTITUTION:A polymethyl isopropenyl ketone (PMIPK) is spin-coated at about 1mum thickness on a suitable substrate 4 and after the PMIPK film dries, the film is subjected to about one minute of image exposing by using an Xe-Hg lamp as a far UV exposing source. A wafer 5 after the exposing is housed into a plasma treatment device 1 and is treated in the down flow of the gaseous plasma mixture composed of O2 and CF4. A plasma generating chamber 2 and a plasma treatment chamber 3 of the down flow thereof are segmented by a perforated aluminum plate 6; therefore, the ions and electrons are stagnated in the chamber 2 and only the oxygen radicals flow into the chamber 3. The negative pattern is thus obtd. at bout 300Angstrom resolution and the swelling of the resist pattern is not admitted. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02191959-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01234841-A |
priorityDate | 1986-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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