http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6254940-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1985-09-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08d19e7192fefa9a316d70469d794450 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14e47f9866f6469d39bf6bc552d62b34 |
| publicationDate | 1987-03-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6254940-A |
| titleOfInvention | Manufacturing semiconductor device |
| abstract | PURPOSE: To prevent a parasitic capacity and a short circuit by oxidizing the first electrode and then forming a thin oxide film on the oxide film. n CONSTITUTION: An oxide film 2 and a polycrystalline silicon film 3 are formed on the entire surface of a silicon substrate 1, phosphorus or arsenic or both are diffused in the silicon 3, and etched. Then, it is oxidized in steam atmo sphere, the oxide film on Si is etched to form an oxide film 5. Further, a thin oxide film such as TEOS 6 (tetraethoxysilane) is accumulated on the film 5, and with a mask material 7 as a mask it is etched to allow a part 8 of the film 6 to remain on the silicon substrate. Thereafter, an oxide film 9 is formed by thermal oxidation, and the second electrode 10 made of polycrystalline silicon is formed. n COPYRIGHT: (C)1987,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5855970-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6450429-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6013338-A |
| priorityDate | 1985-09-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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