http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S627167-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 1985-07-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbb037a216122d09f9f41a880e1f1c27 |
| publicationDate | 1987-01-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S627167-A |
| titleOfInvention | Formation of diode |
| abstract | PURPOSE:To obtain a diode which is strong against an electrostatic damage and is effectively operated by forming a hole for leading source and drain electrodes and simultaneously forming a hole at an insulating layer on the gate electrode of the diode, and further removing the gate electrode. CONSTITUTION:A thin silicon film is coated on a silicon oxide substrate 1, and N-type high density impurity regions 2, 3, 12, 13 are formed. A region therebetween becomes I-type regions 4, 14, and gate electrodes 6, 16 coated with polysilicon similarly patterned are coated further thereon. A PSG is, for example, coated entirely as a protective insulating film 7, and a part is opened to lead electrodes to form holes 9, 10, 19, 20. A hole 8 is formed to expose the electrode 6, an aluminum layer 21 is coated on the entire surface, pattern- etched to form aluminum electrodes 22-25, wired as prescribed, and the electrode 6 on the diode is removed. When the diode is formed and used as a protective diode, a gate electrode is not provided. Thus, the dielectric breakdown is not caused because of the charging even on the insulation substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8917265-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7928946-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536937-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6778231-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6975296-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8355015-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10115350-B2 |
| priorityDate | 1985-07-03^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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