| abstract |
PURPOSE: To obtain electric and electronic devices having improved thermal resistance, mechanical strength, chemical resistance and electric insulating properties, by incorporating a polyimide thin film having a specified thickness and specified dielectric strength in the devices. n CONSTITUTION: A thin film of polyimide having a thickness of 1000 Å or below and dielectric breakdown strength of 1 × 10 6 V/cm or above is employed for an electric or electronic device. For example, an amphoteric polyimide precursor with a repeating unit as represented by the formula is deposited on a substrate which has been previously treated by the Langmiur-Blodgett's technique, if required, and subsequently it is converted into imide for forming the polyimide thin film which is then subjected to an after-treatment, if required. In this manner, electric and electronic devices are provided. In the formula, R 1 represents a tetravalent radical containing two carbon atoms, R 2 represents a divalent radical containing two carbon atoms and R 3 WR 6 represent a monovalent radical in which a monovalent aliphatic radical having 1W30 carbon atoms for example is coupled with a radical of fatty acid white these radicals are radicals substituted with halogen atoms or the like or they are hydrogen atoms. n COPYRIGHT: (C)1988,JPO&Japio |