http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63128752-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 |
| filingDate | 1986-11-19^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f1404e56c6ccba0240c00ecac565529 |
| publicationDate | 1988-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63128752-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To obtain a semiconductor device capable of forming a thick oxide film and of reducing the difference in level of oxide films by a method wherein a photoresist film is formed on a base junction region at an epitaxial layer formed on a substrate, and the total thickness of oxide films composed of a thermal oxide film and a CVD film which the formed on the epitaxial layer which is etched down to a prescribed depth, is polished to form a mirror surface until a prescribed film thickness is obtained with a view to obtaining the base junction region and an emitter junction region. n CONSTITUTION: A photoresist film 10 is removed; a thermal oxide film 3 is formed; a CVD film 12 is formed on this film. Oxide films 3, 12 on a region where a base junction region is to be formed are polished to form a mirror surface until the thickness of the oxide films becomes 0∼2000 Å. After that, the oxide films on the region are removed completely by a wet etching method. A base junction region 4 is formed by ion implantation to be shallow; an oxide film 5 is formed by a CVD method; a pattern for an emitter is formed by a photolithographic technique; an emitter junction region 6 is formed by ion implantation. After a base ohmic contact hole 4a and an emitter ohmic contact hole 6a have been formed by the photolithographic technique, a platinum silicide film 7, a base electrode metal 8 and an emitter electrode metal 9 are formed. n COPYRIGHT: (C)1988,JPO&Japio |
| priorityDate | 1986-11-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454705035 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25199861 |
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