http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63202066-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
filingDate 1987-02-17^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e9d20c4c9ce06bdd91b33e93bd3a834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1be53990b0e1513c2735873d8e28693d
publicationDate 1988-08-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S63202066-A
titleOfInvention Manufacture of semiconductor device
abstract PURPOSE: To make it possible to finely form a island of a polycrystalline silicon film on a window without slippage by removing the second silicon oxide film formed on the polycrystalline silicon film leaving the part on the window to expose the polycrystalline silicon film of the window part. n CONSTITUTION: A window 9 is formed on the first silicon oxide film 8 of a semiconductor substrate 6 and a polycrystalline silicon film 10 is formed on this surface. The second silicon oxide film 11 is formed thereon and this is removed by dry etching leaving only the part of the window 9 to expose the polysilicon film 10, followed by removing a part of the second silicon oxide film 11 remaining on the window by wet etching. Next, the polycrystalline silicon film 10 exposed to the surface is oxidized to be made into the third silicon oxide film 12 and the remaining second silicon oxide film 11 is removed by wet etching for exposing the polycrystal silicon film 10 of the window part. thereby, the island of the polycrystalline silicon film can be formed on the window formed on the semiconductor substrate surface without slippage. n COPYRIGHT: (C)1988,JPO&Japio
priorityDate 1987-02-17^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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