http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63226920-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1987-03-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83f019f6a99e4ba60eed796ee8c12237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ff9656bc70c4880bdfd59ebfba80a10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5c7dd82c74e9a093f791708c570d872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9df331df2ec5cdbd2853875672bb53c |
| publicationDate | 1988-09-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63226920-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To form a boron-diffused layer which is shallow and which is extended little in the transverse direction by a method wherein a B-and-Si-containing film is formed on an Si substrate via an Si oxide film and this assembly is heat-treated while H or F is contained in the silicon oxide film so that the B can be diffused from the B-and-Si-containing film into the Si substrate through the Si oxide film. n CONSTITUTION: Boron-and-silicon-containing films 4 are formed on a silicon substrate 1 via a silicon oxide film 3; this assembly is heat-treated while hydrogen or fluorine is contained in the silicon oxide film 3; boron is diffused from the boron-and-silicon-containing films 4 into the silicon substrate 1 through the silicon oxide film 3. For example, a field oxide film 2 and a gate oxide film 3 are formed on an n-type silicon substrate 1; then, boron-doped silicon oxide films 4 are formed, and are left on the gate oxide film 3 by a photo process. Then, this assembly is heated in a mixed atmosphere of hydrogen and nitrogen; boron-diffused layers 5 which are shallow, which are extended little in the transverse direction and which are used as a source and a drain for a fine MOS transistor are formed under the gate oxide film which is situated directly under the borondoped silicon oxide film 4. n COPYRIGHT: (C)1988,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8906792-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6448105-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9949521-A1 |
| priorityDate | 1987-03-16^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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