http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S632379-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 1986-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d40ec4097c0609620076d777f74040bb |
| publicationDate | 1988-01-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S632379-A |
| titleOfInvention | Manufacture of vertical type pnp transistor |
| abstract | PURPOSE: To manufacture a vertical type PNP transistor, VCE(sat) of which is reduced largely, by setting impurity concentration so that the impurity concentration of a buried layer is made lower than a collector buried layer. n CONSTITUTION: An N-type impurity is diffused selectively to the surface of a P-type silicon semiconductor substrate 21, and a buried layer 23 is driven in. Boron forming a collector buried layer 25 and lower diffusion layers 32 in upper and lower isolation regions 24 is deposited on the buried layer 23 and the surface of the substrate 21 surrounding the buried layer 23. Since impurity concentration (peak concentration) in the surface of the substrate 21 after diffusion is set so that the buried layer 23 is made smaller than the collector buried layer 25, all of a region diffused in the upper direction from the surface of the substrate 21 from the collector buried layer 25 are not intruded by phosphorus, and can operate substantial ly as the collector buried layer 25, and one part of a region diffused in the lower direction from the surface of the substrate 21 can also work. n COPYRIGHT: (C)1988,JPO&Japio |
| priorityDate | 1986-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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