http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63278321-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1987-05-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_463744519ed3626bc2815c2159d056fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b2c969e7e0a56916f124e33c9820eb1 |
| publicationDate | 1988-11-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63278321-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To enable simultaneous formation of a single-crystal silicon layer and a polycrystalline silicon layer on respective corresponding regions on a substrate, by performing ion implantation of argon or the like with appropriate implanting energy and subsequently by using a CVD method or the like to heap silicon there. n CONSTITUTION: Ion implantation and sputtering processes of argon, silicon, silicon trifluoride, nitrogen, and the like are performed without removing a silicon nitride film 2 used in a LOCOS method. Thereupon, oxygen atoms are removed from a surface layer of a silicon dioxide film 3, so that only active silicon atoms are made to exist on the surface layer of the silicon dioxide film 3. When the silicon nitride film 2 is removed and next monosilane contact processing is performed at 980°C under a normal pressure, a p-type single-crystal silicon film 4 and a low-resistance polycrystalline silicon layer 5 are made to grow on an n-type silicon substrate 1 and on the silicon dioxide film 3, respectively. The p-type single-crystal silicon film 4 and the low-resistance polycrystalline silicon layer 5, growing respectively, are upgraded in their film qualities. n COPYRIGHT: (C)1988,JPO&Japio |
| priorityDate | 1987-05-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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