http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6328067-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1986-07-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9196fbf98b705c347a6c9cec052d65bb |
| publicationDate | 1988-02-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6328067-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To prevent side etch from being generated, by implanting nitrogen or oxygen ions selectively in a Si semiconductor base and by performing heat treatment and by etching and removing the part where the ion implantation has not been performed by using potassium hydroxide. n CONSTITUTION: Nitrogen or oxygen ions are implanted selectively in a Si semiconductor base made of polycrystalline Si or the like, and then this base is subjected to heat treatment, and then the base part where ion implantation is not performed is selectively etched and removed by using an aqueous solution of potassium hydroxide. For example, a 100 Å polycrystalline Si layer 28 is formed on a substrate 27, then a photoresist layer 29 is piled thereon and photo- etching is performed to form a mask for ion implantaion, and then 5×10 15 cm -2 N + 2 accelerated by 40keV is implanted in the polycrystal line Si 28. Successively heat treatment is performed in an atmosphere of 700 °C N 2 for 30 min. Etching is performed by using hot phosphoric acid to remove the part where N + 2 ions are not implanted. Thus, because no side etch is generated, etching can be performed perfectly in a mask pattern. n COPYRIGHT: (C)1988,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6461967-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6309975-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7247578-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6599840-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6596642-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9840909-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005067020-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6596648-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6261964-B1 |
| priorityDate | 1986-07-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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